In silicon chip fabrication, each of the metal layers is required to have evenly distributed metal density for chemical mechanical polishing to ensure high yield.Filling dummy metal is a widely-employed solution to such requirement, however, the dummy metal will not only introduce significant parasitic capacitance but also induce eddy current due to electromagnetic coupling with the circuit components.Consequently, the inductive components such as inductors and transformers typically suffer from quality factor degradation after the dummy metals are filled.In this paper, a new approach for filling dummy metals is proposed.The dummy metals around the inductor are filled by metal stripes perpendicular to the current flowing direction, which can reduce the loss due to eddy current and thus alleviate the quality factor degradation.Simulation results show that the proposed method can improve the quality factor by 7.2% for the secondary coil and 17.6% for the primary coil of inductors working at 15 GHz to 70 GHz.