- ZENG Dingyuan
ZENG Dingyuan
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641
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Search for this author on this site - ZHU Haoshen
ZHU Haoshen
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330
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Search for this author on this site - FENG Wenjie
FENG Wenjie
Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330;School of Electronic and Optical Engineering, Nanjing University of Science & Technology, Nanjing 210094
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Search for this author on this site - CHE Wenquan
CHE Wenquan
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330
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Search for this author on this site - XUE Quan
XUE Quan
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330
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A 24-30 GHz monolithic integrated Single-Pole Double-Throw (SPDT) switch based on 100 nm Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) process is presented in this paper.This switch adopts a quarter-wavelength microstrip line with parallel HEMT devices topology.By using two-stage parallel HEMT design, the SPDT achieves greater isolation while maintaining good Insertion Loss (IL).With a control voltage of 0/-5 V, the measured IL of this SPDT is less than 1.5 dB, the isolation is greater than 28 dB, and the input power 1 dB compression point is greater than 27 dBm within 24-30 GHz 5G millimeter-wave frequency bands.The measurement results well verify the simulations.
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ZENG Dingyuan, ZHU Haoshen, FENG Wenjie, CHE Wenquan, XUE Quan. A 24-30 GHz GaN HEMT SPDT switch MMIC[J]. Journal of Nanjing University of Information Science & Technology,2021,13(4):444-449
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- Received:July 03,2021
- Online: October 11,2021
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