JIANG Lanlan
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641CHEN Hongchen
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330ZHU Haoshen
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330FENG Wenjie
Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330;School of Electronic and Optical Engineering, Nanjing University of Science & Technology, Nanjing 210094CHE Wenquan
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330XUE Quan
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330TN43
JIANG Lanlan, CHEN Hongchen, ZHU Haoshen, FENG Wenjie, CHE Wenquan, XUE Quan. A 20-26 GHz variable-gain low-noise amplifier using GaN-on-Si technology[J]. Journal of Nanjing University of Information Science & Technology,2021,13(4):413-419
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