A 20-26 GHz variable-gain low-noise amplifier using GaN-on-Si technology
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TN43

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    Abstract:

    Based on 100 nm GaN-on-Si MMIC technology, this paper presents the design of a 20-26 GHz Variable-Gain Low-Noise Amplifier (VGLNA).This LNA adopts a three-stage common source topology and realizes gain control by adjusting the gate bias of the second and third stages.The test results show that the amplifier achieves a >20 dB gain tuning range and a ±1.5 dB gain flatness within the working frequency range, and dissipates power from 126 mW to 413 mW.When biased with a -1.1 V gate voltage and 3.5 V drain voltage, the amplifier achieves a small-signal gain of more than 20 dB in the whole band, a Noise Figure (NF) ranging from 2.95 dB to 3.5 dB, and an average output 1dB compression point(OP1dB) around 14.5 dBm.The chip area is 2 mm2.

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JIANG Lanlan, CHEN Hongchen, ZHU Haoshen, FENG Wenjie, CHE Wenquan, XUE Quan. A 20-26 GHz variable-gain low-noise amplifier using GaN-on-Si technology[J]. Journal of Nanjing University of Information Science & Technology,2021,13(4):413-419

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History
  • Received:July 03,2021
  • Online: October 11,2021
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