Research progress of silicon-based millimeter-wave transceiver front-end integrated circuits

doi:10.13878/j.cnki.jnuist.2021.04.001

2025-5-29- 7

Home > Archive>Volume 13, Issue 4, 2021 >383-396. DOI:10.13878/j.cnki.jnuist.2021.04.001

Research progress of silicon-based millimeter-wave transceiver front-end integrated circuits
DOI:
                        10.13878/j.cnki.jnuist.2021.04.001
                    
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                        QIU FengQIU Feng
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330
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WAN CaoWAN Cao
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330
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LUO XiongyaoLUO Xiongyao
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330
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DENG ShuaiDENG Shuai
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330
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XU TaotaoXU Taotao
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330
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MEI ShucongMEI Shucong
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641
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CHEN JiawenCHEN Jiawen
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641
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WU LiangWU Liang
Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330;School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Shenzhen 518172
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ZHU HaoshenZHU Haoshen
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330
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CHE WenquanCHE Wenquan
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330
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XUE QuanXUE Quan
School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330
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Abstract:

The Integrated Circuits (ICs) for millimeter-wave transceiver front-ends have attracted great attention in recent year, as the deployment of fifth-generation mobile communication systems (5G) enters millimeter-wave band regime (FR2) and the application of millimeter-wave radar in autonomous vechicle technology.Meanwhile, the rapid development of silicon-based device fabrication technology has greatly improved the cut-off frequency of transistors, providing a foundation for low-cost, high-performance silicon-based millimeter-wave ICs.This article summarizes recent research and development progress and trends of silicon-based millimeter-wave front-end ICs for communications and radar applications.

Key words:integrated circuit;millimeter-wave;radio frequency front-end

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QIU Feng, WAN Cao, LUO Xiongyao, DENG Shuai, XU Taotao, MEI Shucong, CHEN Jiawen, WU Liang, ZHU Haoshen, CHE Wenquan, XUE Quan. Research progress of silicon-based millimeter-wave transceiver front-end integrated circuits[J]. Journal of Nanjing University of Information Science & Technology,2021,13(4):383-396

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Received:July 07,2021
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Online: October 11,2021
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